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Extra info for Semiconductor Sensors in Physico-Chemical Studies (Handbook of Sensors and Actuators)
27) for above two limiting cases differing in the value of the surface concentration of adsorption particles brings about different dependencies of the value of the surface band bending as a function of parameters of the absorbate-adsorbent system. 28) Nta < ~r2NoLD(4-a - ~~so), were +s0 > 1. 28) gives the equilibrium height of the surface barrier caused by the total transition of ehemisorbed particles into the charged form. 29) is valid the equilibrium height of the barrier is determined by the leveling-off of energy state of adsorption particle with the Fermi level of adsorbent.
Integrating equation ( 1 . 11) where g 1= KoSP e-EA/kT + e-EO/kr; 42zmkr v b = ~42xrnkT K0S e -(z*-E~)/kr - b0 e x p ( - Q / k T ) , Q being the adsorption heat. 11) can be rewritten as N(t) ~ K~ 42 e -E*/kr p t . 12) which is often observed in experiment is as often violated. , and t. are the constants dependent on the type of absorbate-adsorbent pair. 22 Similarly to analysis of adsorption equilibrium in ease of investigation of adsorption kinetics the appearance of non-Langmuir features is being described by violation of certain basic assumptions of the Langmuir theory.
Is the concentration of adsorption sites; EA and Eo are the activation energies of adsorption and desorption, respectively; A and B are constants containing leading factors, given by the theory of reaction rates and by kinetic theory of gases; P is the pressure in gaseous phase. 9) describes the number of particles incident from gaseous phase on a unit surface of adsorbent per unit time, second term accounting for amount of particles emitted into the gaseous phase. 9) can be written as 21 d N = Ko SP ( N .